cystech electronics corp. spec. no. : c320s3 issued date : 2007.11.06 revised date : 2013.09.03 page no. : 1/7 MTN138KS3 cystek product specification n-channel mosfet MTN138KS3 description the MTN138KS3 is a n-channe l enhancement-mode mosfet. features ? low on-resistance ? high esd ? high speed switching ? low-voltage drive ? easily designed drive circuits ? easy to use in parallel ? pb-free package symbol outline MTN138KS3 sot-323 d d g s g g gate s source s d drain ordering information device package shipping MTN138KS3-0-t1-g sot-323 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c320s3 issued date : 2007.11.06 revised date : 2013.09.03 page no. : 2/7 MTN138KS3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous i d 220 drain current pulsed i dp 800 *1 continuous i dr 220 drain reverse current pulsed i drp 800 *1 ma total power dissipation p d 200 *2 mw thermal resistance, junction to ambient r ja 625 *2 c c/w esd susceptibility 1500 *3 v operating channel temperature range t ch -55~+150 storage temperature range tstg -55~+150 c note : *1. pulse width 300 s, duty cycle 2% *2. when the device is mounted on a minimum pad size *3. human body model, 1.5k in series with 100pf electrical characteristics (ta=25 c) symbol min. typ. max. unit test conditions static bv dss* 60 - - v gs =0, i d =10 a v gs(th) 0.5 1.2 1.5 v v ds =v gs , i d =250 a i gss - - 10 v gs =20v, v ds =0 i dss - - 1 a v ds =60v, v gs =0 - 1.2 3 i d =220ma, v gs =10v r ds(on)* - 1.4 3.2 i d =220ma, v gs =4.5v g fs 200 360 - ms v ds =10v, i d =220ma dynamic c iss - 29 - c oss - 4 - c rss - 2.8 - pf v ds =25v, v gs =0, f=1mhz t d(on) - 3 - t r - 5 - t d(off) - 14 - t f - 9 - ns v ds =30v, i d =200ma, v gs =10v, r g =6 qg - 1.1 - qgs - 0.1 - qgd - 0.23 - nc v ds =30v, i d =200ma, v gs =10v source-drain diode *v sd - 0.8 1.2 v v gs =0v, i s =200ma *pulse test : pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c320s3 issued date : 2007.11.06 revised date : 2013.09.03 page no. : 3/7 MTN138KS3 cystek product specification typical characteristics typical output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0123456 v ds , drain-source voltage(v) i d , drain current(a) 3.5v 4v 3v v gs =2v 2.5v typical transfer characteristics 0 0.2 0.4 0.6 0.8 1 1.2 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v static drain-source on-state resistance vs drain current 1 10 100 1000 0.001 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =1.8v v gs =2.5v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=125c static drain-source on-state resistance vs gate-source voltage 0 1 2 3 4 5 6 7 024681 0 gate-source voltage-vgs(v) static drain-source on-state resistance-rds(on)() id=100ma drain-source on-state resistance vs junction tempearture 0 1 2 3 4 5 6 7 -60 -20 20 60 100 140 180 junction temperature-tj(c) static drain-source on-state resistance-rds(on)() vgs=10v, id=100ma
cystech electronics corp. spec. no. : c320s3 issued date : 2007.11.06 revised date : 2013.09.03 page no. : 4/7 MTN138KS3 cystek product specification characteristic curves(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) v gs(th) , normalizedthreshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance(s) pulsed ta=25c v ds =3v v ds =10v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -20 20 60 100 140 180 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v power derating curve 0 50 100 150 200 250 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw)
cystech electronics corp. spec. no. : c320s3 issued date : 2007.11.06 revised date : 2013.09.03 page no. : 5/7 MTN138KS3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c320s3 issued date : 2007.11.06 revised date : 2013.09.03 page no. : 6/7 MTN138KS3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) 183 c 60-150 seconds 217 c 60-150 seconds ? time (t l ) peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c320s3 issued date : 2007.11.06 revised date : 2013.09.03 page no. : 7/7 MTN138KS3 cystek product specification sot-323 dimension marking: te date code kn xx device code style: pin 1.gate 2.source 3.drain 3-lead sot-323 plastic surface mounted package cystek package code: s3 millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.100 0.035 0.043 e1 2.150 2.450 0.085 0.096 a1 0.000 0.100 0.000 0.004 e 0.650 typ 0.026 typ a2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055 b 0.200 0.400 0.008 0.016 l 0.525 ref 0.021 ref c 0.080 0.150 0.003 0.006 l1 0.260 0.460 0.010 0.018 d 2.000 2.200 0.079 0.087 0 8 0 8 e 1.150 1.350 0.045 0.053 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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